Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

摘要

Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from channeling of MeV α-particles. This was done in the as-implanted case and after furnace annealing at temperatures up to 1000°C. A short description of the applied techniques is presented. The crystal disorder was found to almost vanish during annealing at 600°C and to reappear at higher annealing temperatures at a depth coinciding with the projected range of the boron ions. Both the boron and the disorder depth profiles are broadened after annealing at 1000°C. The results agree with recent findings on defect annealing in silicon.